Electrophysical properties of singlecrystal silicon sequentially doped with sulfur and zinc impurity atoms

Authors

  • M.K. Haqqulov Tashkent state technical university.

Keywords:

silicon, siliconsulfur, cluster, impurity

Abstract

The paper studies electro physical properties of single crystal silicon after gradual (firstsulfur, afterwards -zinc) diffusion of impurity atoms of sulfur and zinc. The authors investigated how the Si2ZnS -structured binary compounds form in the crystal lattice of silicon and also studied the physical mechanisms of how additional thermal treatment might influence the process of formation of clusters.

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Published

2023-11-10

How to Cite

M.K. Haqqulov. (2023). Electrophysical properties of singlecrystal silicon sequentially doped with sulfur and zinc impurity atoms. Genius Repository, 24, 8–12. Retrieved from http://geniusrepo.net/index.php/1/article/view/322

Issue

Vol. 24 (2023): EJPCM

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.